single n-channel, 20v, 3.9a, power mosfet descriptions the WNM2024 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power sw itch and charging circuit. standard product WNM2024 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-23 pin configuration (top view) w24* w24 = device code * = month (a~z) marking order information device package shipping WNM2024-3/tr sot-23 3000/reel&tape v ds (v) rds(on) ( ? ) 0.027@ v gs =4.5v 0.031@ v gs =2.5v 20 0.036@ v gs =1.8v 3 d gs 1 2 3 2 1 WNM2024 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 20 gate-source voltage v gs 8 v t a =25c 3.9 3.6 continuous drain current a t a =70c i d 3.1 2.9 a t a =25c 0.8 0.7 maximum power dissipation a t a =70c p d 0.5 0.4 w t a =25c 3.6 3.3 continuous drain current b t a =70c i d 2.8 2.6 a t a =25c 0.7 0.6 maximum power dissipation b t a =70c p d 0.4 0.3 w pulsed drain current c i dm 15 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 s 120 145 junction-to-ambient thermal resistance a steady state r ja 132 168 t 10 s 145 174 junction-to-ambient thermal resistance b steady state r ja 158 202 junction-to-case thermal resistance steady state r jc 60 75 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. sales@twtysemi.com 2 of 3 http://www.twtysemi.com WNM2024 product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 20 v zero gate voltage drain current i dss v ds =16 v, v gs = 0v 1 ua gate-to-source leakage current i gss v ds = 0 v, v gs =8v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 0.4 0.62 1.0 v v gs = 4.5v, i d = 3.6a 27 36 v gs =-2.5v, i d =2.8a 31 41 drain-to-source on-resistance r ds(on) v gs = 1.8v, i d = 2.0a 36 47 m ? forward transconductance g fs v ds = 5 v, i d = 3.6 a 10 s charges, capacitances and gate resistance input capacitance c iss 1025 output capacitance c oss 125 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 120 pf total gate charge q g(tot) 12.0 threshold gate charge q g(th) 0.66 gate-to-source charge q gs 1.0 gate-to-drain charge q gd v gs =4.5 v, v ds =10 v, i d = 3.6 a 3.3 nc switching characteristics turn-on delay time td(on) 6.5 rise time tr 11.5 turn-off delay time td(off) 48 fall time tf v gs = 4.5 v, v ds = 6 v, i d =2.0 , r g =6 ? 20 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 1.5a 0.5 0.6 1.5 v a WNM2024 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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